Abstract
Abstract In this study, the design and characterization of CdO/InSe thin film transistors (TFT) that are grown onto Au substrates are investigated. The devices are also subjected to a vacuum annealing process at 300 oC to enhance the structure and electrical performance. It was observed that the growth of polycrystalline monoclinic In6Se7 phase of InSe is preferred at this annealing temperature when coated onto Au/CdO substrates. Electrically, noisy negative capacitance effect accompanied with resonance-antiresonance phenomena is observed in the capacitance spectra of the as prepared TFT devices. The annealing of the TFT devices reduced the noise in the capacitance, conductance, impedance, and reflection coefficient and return loss spectral responses. The heat treated TFT devices displayed low bandpass, high bandpass and bandstop filter characteristics in the studied frequency domain (0.01-1.80 GHz) indicating the applicability of these devices as radio wave-microwave resonators.
Highlights
Cadmium oxide substrates are promising layers which find many optoelectronic applications
Dielectric- loaded waveguides is designed onto CdO transparent substrates for this purpose. These waveguides are nominated as platforms for integrated triplet photon generation which can be used for on-chip wavelength conversion, MIR up-conversion photodetection, and quantum signal processing[1]
It is clear from the figure that while the as prepared heterojunction ACI devices hardly reaches the standard values (~20 dB), the annealing enhances the return loss values significantly in the high pass mode
Summary
Cadmium oxide substrates are promising layers which find many optoelectronic applications. Dielectric- loaded waveguides is designed onto CdO transparent substrates for this purpose. These waveguides are nominated as platforms for integrated triplet photon generation which can be used for on-chip wavelength conversion, MIR up-conversion photodetection, and quantum signal processing[1]. CdO substrates are regarded as good layers for the production of photodiodes which can perform well in the visible range of light[3]. As thin film transistors InSe processes high gain and short response time which make it attractive for the fabrication of photodetectors and micro-light emitting diode displays[5]. The features of the CdO substrates and the wide range of applications of InSe motivated us to bring these two materials together to form a heterojunction device. The ohmic contact to n-InSe layer is achieved by
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