Abstract
Al‐doped β‐SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1 MPa nitrogen atmosphere, using polytetrafluoroethylene as the chemical activator and Al as the dopant. The β‐SiC powders produced have fine spherical particles and narrow particle size distribution. The impurity phase of Al2O3 is generated and the doped β‐SiC contains N component when Al content is up to 10%. The electric permittivities of β‐SiC samples were determined in the frequency range of 8.2–12.4 GHz. Results show that the β‐SiC doped with 10% Al has the highest real part ɛ′ and imaginary part ɛ″ of permittivity. The mechanism of dielectric loss by doping has been discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
