Abstract
Al‐doped β‐SiC powders were synthesized via combustion reaction of the Si/C system in a 0.1 MPa nitrogen atmosphere, using polytetrafluoroethylene as the chemical activator and Al as the dopant. The β‐SiC powders produced have fine spherical particles and narrow particle size distribution. The impurity phase of Al2O3 is generated and the doped β‐SiC contains N component when Al content is up to 10%. The electric permittivities of β‐SiC samples were determined in the frequency range of 8.2–12.4 GHz. Results show that the β‐SiC doped with 10% Al has the highest real part ɛ′ and imaginary part ɛ″ of permittivity. The mechanism of dielectric loss by doping has been discussed.
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