Abstract
We fabricated high-quality n-type Ag2ZnSnSe4 (AZTSe) film with kesterite structure by using a simple solution method. A Cu2ZnSnSe4 (CZTSe)/AZTSe-based solar cell was designed and prepared by inserting AZTSe layer between CZTSe and CdS of the traditional CZTSe-based solar cell. Compared with the traditional device, an increase from 337 to 432 mV in open circuit voltage (Voc) and an accompanying rise from 3.40% to 4.72% in power conversion efficiency (PCE) were observed. To well understand the PCE improvement of the CZTSe/AZTSe-based solar cells, we calculated the band alignments of CZTSe/AZTSe and CZTSe/CdS heterojunctions using first-principles calculations, demonstrating that the CZTSe/AZTSe and CZTSe/CdS interfaces have type-II and type-I band alignments, respectively. Moreover, the band offset of AZTSe/CdS is lager than the one of CZTSe/CdS. Combined with the calculation results, the mechanism of influence of the AZTSe on the PCE improvement is discussed in detail. Our conclusions show that the addition of the AZTSe layer is a potentially applicable method to obtain CZTSe-based solar cells with higher Voc and PCE.
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