Preparation and characterization of (001)- and (110)-oriented 0.6FeTiO3⋅0.4Fe2O3 films for room temperature magnetic semiconductors

Abstract

Thin films of ilmenite-hematite solid solution 0.6FeTiO3⋅0.4Fe2O3 were prepared on α-Al2O3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2=1.3×10−3Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTiO3⋅0.4Fe2O3 films with R3¯ symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTiO3⋅0.4Fe2O3.