Abstract
Aluminum oxide thin films prepared from wet chemistry were deposited onto anodized aluminum substrates, where aluminum iso-propylate was used as the precursor to prepare the aluminum oxide films. Barrier-type anodized aluminum oxide film with different thickness was deposited in an aqueous solution of ammonium pentaborate under selected anodizing voltages. The electro-transport characteristics (I–V) are used to identify their dielectric behaviors. The FESEM micrographs and metallographic photographs were used to analyze the physical variation after the breakdown. The nonlinear electrical transport behavior and the breakdown phenomenon of the aluminum oxide thin films are studied.
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