Abstract
The aging behavior of the solid‐solution series (Pb(Mg1/3Nb2/3)O3)1−x–(PbTiO3)x (PMN1−x−PTx) prepared by chemical‐solution deposition without seeding layers was investigated. A strong influence of the rapid thermal annealing step on the film density was determined. The best nucleation and density of the thin films occurred when each deposited layer was separately pyrolyzed and crystallized. The thin‐film microstructure was investigated using scanning electron microscopy. Conventional capacitance‐voltage and hysteresis measurements were performed. For the first time, investigations on the fatigue performance and the leakage current for alternating‐current and direct‐current voltage were executed, which are important for the reliability in device applications.
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