Preoxidation gettering of oxidation-induced stacking faults in silicon by the phosphorus diffusion process

Abstract

Preoxidation gettering of oxidation-induced stacking faults (OSF) in a silicon wafer by the reverse side phosphorus diffusion-induced misfit dislocations has boon studied. This gettering scheme either prevents the formation of OSF during the thermal oxidation of silicon or deactivates the electrical activity of those OSF having heen formed. The get taring action takes place by removing or isolating the impurities from being precipitated at the OSF nueleation sites and confines them to the misfit dislocations al the reverse.side of the wafer. It is expected that the misfit dislocations continue to act as sinks of impurities during the subsequent high-temperature oxidation process and results in a great improvement of device yield and performance.