Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films

Abstract

The effect of thermal dry oxidation on an off-axis (111) 3C-SiC film have been studied in order to subsequently realize a metal-oxide-semiconductor structure. A morphological characterization of the SiO2 surface, grown at 1200 °C in an O2 flux, pointed out some defect-related effects as a consequence of the preferential oxidation of stacking faults over the (111) 3C-SiC surface. Scanning electron microscopy and atomic force microscopy confirmed such a hypothesis. Stacking faults are seen as promoters of a local polarity inversion in (111) 3C-SiC, from Si- to C-terminated surface, resulting in a higher oxidation rate as compared to defect-free zones.