Preferential N‐H bond direction in GaAsN grown by chemical beam epitaxy

Abstract

AbstractThe two N‐H local vibrations in GaAsN grown by the chemical beam epitaxy have the same preferential orientation in the crystal. The bond orientations of the N‐H wagging mode at 961 cm‐1 and stretching mode at 2952 cm‐1 tend to align along [1‐10]. The peak intensities of the three major N‐H local vibration modes were examined by the polarized Fourier transform infrared spectroscopy. The integrated absorption peaks at 961and 2952 cm‐1 showed the two‐fold rotational symmetry in (001) plane, while the one at 3098 cm‐1 was almost constant within the accuracy of this measurement. The maximum peak intensities were observed when the IR polarization direction was [110] for the N‐H wagging mode at 961 cm‐1, and [1‐10] for the N‐H stretching mode at 2952 cm‐1, which means that those bond orientations projected on (001) plane were the same. The result indicates that the N‐H wagging mode at 961 cm‐1 and stretching mode at 2952 cm‐1 are originated from the same N‐H bond. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)