Correlations between N–H local vibrational modes in GaAsN grown by chemical beam epitaxy

Abstract

Correlations between N–H local vibrational modes (LVMs) in GaAsN grown by chemical beam epitaxy are studied by polarized Fourier transform infrared spectroscopy. The N–H bonds of LVMs at 960, 2952, 3011, and 3098 cm−1 are shown to exhibit polarizations along in the GaAsN(001) plane. By comparing the polarization degrees of those LVMs, it is shown that the four LVMs have no correlations with each other. This result indicates that there are four types of N–H complexes whose bond directions are 〈111〉. Those structures are considered to be of the bond-center or antibonding type with interstitial host atoms, antisite host atoms, and vacancies.