Preferential growth of specific crystal planes based on the dimension control of single crystal SnO2 nanobelts

Abstract

In this paper, we have proposed a new crystal plane control technique of single crystal SnO2 nanobelts by thermal sublimation. The synthesis pressure was found to drastically influence the dimension of the cross-sectional aspect ratio (width–thickness) of the nanobelts. The pressure changed the surface free energy that contributes to the preferential growth of crystal planes of the nanobelt. The aspect ratio range of 1.2 to 7.39 for the nanobelts was achieved solely owing to the pressure variation. Also, as a catalyst style on the synthesis by thermal sublimation, the dispersed Au nanoparticles assisted the formation of uniform SnO2 nanobelts.