Abstract
AbstractThe CoSi2 thin film growth by Co/Si solid state interaction was investigated. The electrical and crystal properties of the films formed on (111) and (100) Si substrates were characterized after a rapid thermal annealing. A strong preferential CoSi2 (111) orientation grain growth was observed on (111)Si substrate. The formed CoSi2 film was highly conductive with a resistivity of 15.5 µΩ · cm.
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