Preface: Phys. Status Solidi C 6/8

Abstract

AbstractThis proceedings issue of physica status solidi contains papers presented as oral and poster contributions at the International Conference on Extended Defects in Semiconductors (EDS 2008). This conference was held in France at the new campus of Poitiers University situated in the Futuroscope area on 14–19 September 2008 and was organized by PHYMAT laboratory (UMR 6630 of CNRS and University of Poitiers). The EDS conference series was inaugurated in Hünfeld (Germany) and was followed by conferences in Poland, France, Great Britain, Germany, and Russia. The EDS 2008 is the direct follower of the conferences of 2004 held in Chernogolovka (Russia) and 2006 in Halle (Germany).The aim of the conference was to provide a forum on the current state‐of‐the‐art of investigation and modelling of extended defects in semiconductors in order to achieve a deeper understanding of lattice imperfections, their interaction, and their role in the development of semiconductor technology. The following main topics were covered:– Relation between extended defects and nanostructures in semiconductors– Defect structure: defect imaging and modelling– Electronic structure of extended defects– Mechanical properties and dislocations: nucleation and dynamics– Interaction between defects– Structure of strained layers– Defects in thin films and interfaces, interface structures– Role of extended defects in devices, defects engineering– Narrow and wide band gap materials– Defects in solar cell materials and photovoltaic devices– Embedded semiconductor nanoparticles, quantum dot like “extended defects”– Implantation‐induced extended defectsAs a new approach, we emphasized semiconductor behaviour under severe environment (high temperature, complex and high stress field and irradiation). Indeed, both experimental and modelling approaches of extended defect nucleation and properties deserve challenging understanding under these harsh conditions, in which important applications are expected for semiconductors.We wish to thank the members of the EDS 2008 Scientific and Organizing Committees, the sponsors, as well as the referees and authors who made this conference and proceedings a success. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)