Extended Defects in Semiconductors

Abstract

AbstractThis proceedings volume of physica status solidi contains papers presented at the 17th International Conference on Extended Defects in Semiconductors (EDS 2014). They have been selected during a peer‐review process.The conference was organized by the Georg‐August‐University Göttingen and was held at the Physics Faculty as part of the university's North Campus in Göttingen from September 14 to 19, 2014. The biennial conference series on Extended Defects in Semiconductors started with a meeting in Hünfeld, Germany, in 1978. Subsequent meetings took place in France, Great Britain, Germany, Italy, Poland, Russia and the preceding EDS 2012 in Thessaloniki (Greece).EDS 2014 was a conference following the tradition of previous conferences of this series, i.e. it brought together experts in fundamental and applied research on structural defects in current and future semiconducting material systems, their nanostructures and devices. For the first time, carbon‐related materials had been included. It provided a forum for excellent presentations and lively discussions in a stimulating scientific atmosphere.Topics of the conference included– Thin films and heterostructures– Low‐dimensional systems and related defects: semiconductor nanocrystals, quantum wells, quantum dots, nanowires– Extended defects in C‐related materials (incl. graphen)– Interface structures and defect interaction– Doping‐, irradiation‐, and implantation‐induced defects– Electronic structure of defects– Defect engineering, strain engineering– Mechanical properties and dislocation dynamics– Role of defects in optoelectronic and magnetic properties– Degradation mechanisms in semiconductor devices– Atomistic and multiscale simulations, modeling approaches of defects, interfaces and nanostructures– Advanced characterisation techniques and methods for the investigation of semiconductor materials, in‐situ imaging and analysis– Interaction of point and extended defects, point defect agglomeration– Materials for solar energy conversion and energy storage.The organizers want to express their gratitude to all members of the EDS Scientific Committee as well as to the members of the EDS 2014 Program Committee and all referees for their invaluable work. Support by the Georg‐August‐University and the CRC1073 is also gratefully acknowledged.Last but not least, we thank all participants of EDS 2014 whose excellent contributions built the base for a fruitful and stimulating conference. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)