Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

Abstract

Radiation-sensing metal-oxide-semiconductor field-effect transistors produced by the laboratory LAAS-CNRS were exposed to a harsh hadron field that represents the real radiation environment expected at the CERN Large Hadron Collider experiments. The long-term stability of the transistor’s Ids-Vgs characteristic was investigated using the isochronal annealing technique. In this work, devices exposed to high intensity hadron levels (Φ⩾1012neutrons∕cm2) show evidences of displacement damages in the Ids-Vgs annealing behavior. By comparing experimental and simulated results over 14months, the isochronal annealing method, originally devoted to oxide trapped charge, is shown to enable prediction of the recovery of silicon bulk defects.