Abstract
In the present paper, the interaction of electrons with different types of defects in sphalerite CdSexTe1−x (0.1 ≤ x ≤ 0.5) solid solution is considered. Analysis is carried out by using the short-range scattering models for electron interaction with eight kinds of point lattice defects. Calculation of the electron transition probabilities was made based on the wave function and self-consistent potential energy which were evaluated with the help of ABINIT code. For crystals with impurity concentrations 9.4 × 1014 – 1×1018 cm−3, the temperature dependencies of electron mobility and Hall factor in the range 15–1200 K are calculated. A comparative analysis of two competing approaches has been made: a short-range approach and a long-range approach (relaxation time approximation). It was found that these two approaches yield to essential qualitative and quantitative differences for theoretical temperature dependencies of electron mobility.
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