Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning

Abstract

In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML). The full current-voltage (I-V) curves in forward and reverse voltage sweeps were predicted well, with high R-squared values of 0.9938 and 0.9953, respectively, by using random forest regression. Moreover, the TCAD-ML model provided high prediction accuracy not only for the full I-V curves but also for the important device features, such as the latch-up and latch-down voltages, saturation drain current, and memory window. Therefore, this study demonstrated that the TCAD-ML model can substantially reduce the computational time for device development compared with conventional simulation methods.