Abstract
The final results from the CMOS Radiation Effects Measurement (CREM) experiment, flown on Explorer 55, are being presented and discussed, based on about 15 months of observations and measurements. Conclusions are given relating to (a) long range annealing, (b) effects of operating temperature on semiconductor performance in space, (c) biased and unbiased P-MOS device degradation, (d) unbiased n-channel device performance, (e) changes in device transconductance, and (f) difference in ionization efficiency between Co-60 gamma rays and 1 Mev Van deGraaff electrons. Additionally, the performance of devices in a heavily shielded electronic subsystem box within the spacecraft is evaluated and compared. Finally environment models and computational methods and their impact on device degradation estimates are being reviewed to determine whether they permit cost effective design of spacecraft.
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