Abstract
We report a series of measurements of the effect of an electric field on the frequency of the ultranarrow linewidth F70→ D50 optical transition of Eu3+ ions in an Y2SiO5 matrix at cryogenic temperatures. We provide linear Stark coefficients along two dielectric axes and for the two different substitution sites of the Eu3+ ions, with an unprecedented accuracy and an upper limit for the quadratic Stark shift. The measurements, which indicate that the electric field sensitivity is a factor of seven larger for site 1 relative to site 2 for a particular direction of the electric field, are of direct interest in the context of both quantum information processing and laser frequency stabilization with rare-earth doped crystals, in which electric fields can be used to engineer experimental protocols by tuning transition frequencies.
Highlights
Addressable ions as dopants in solids provide an interesting framework for a wide range of contemporary applications in physics
We report a series of measurements of the effect of an electric field on the frequency of the ultranarrow linewidth 7F0 → 5D0 optical transition of Eu3+ ions in an Y2SiO5 matrix at cryogenic temperatures
The measurements, which indicate that the electric field sensitivity is a factor of seven larger for site 1 relative to site 2 for a particular direction of the electric field are of direct interest both in the context of quantum information processing and laser frequency stabilization with rare-earth doped crystals, in which electric fields can be used to engineer experimental protocols by tuning transition frequencies
Summary
Addressable ions as dopants in solids provide an interesting framework for a wide range of contemporary applications in physics. Precision measurements of electric-field-induced frequency displacements of an ultranarrow optical transition in ions in a solid
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