Abstract
We have fabricated InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) by top and bottom mirrors and investigated the sidewall light emission performances for backlight unit. Fabricated USE-LED has uniform light-output-power (LOP) and peak wavelength characteristics at each sidewall except poor light extraction efficiency (LEE) which is improved by fabricating ZnO nanorods on each sidewall. The optimized nanorods improve the LEE of USE-LED. Thus, the LOP increases >80% compared to the Reference-LED. Furthermore, the light-tools simulation results reveal that the LEE of nanorods-based USE-LED increases in lateral direction due to decrease in internal reflection of light.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call