Abstract
In order to produce dome-shaped Ge dots with small size and high density, C submonolayers (C-SMLs) were incorporated at the interface between Ge wetting layers and Ge dots. The C atoms are considered to induce a local strain field by forming Ge–C bonding. Such strain field enhanced dome formation even at low temperature (<500 °C). Optimization of experimental conditions enabled precise control of the Ge dome size in the range of 30–40 nm with the density of 10 10 cm −2. The Ge domes thus prepared exhibited intensive photoluminescence (PL) compared to those prepared by a conventional self-assembling technique.
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