Abstract
The effect of a small amount of C atoms on the Ge dot morphology on Si(001) has been investigated. Submonolayers of carbon were deposited on Ge wetting layers to modify the subsequent Ge dot growth mode. AFM studies revealed that the C layer has two main effects on the Ge dot growth, which were to promote a structural transition from huts to domes and to initiate three-dimensional growth even on a thin wetting layer. The results indicated that the C atoms, which were localized at the interface between the Ge wetting layer and the Ge dot, induced a strain field and destabilized the hut structure. As a result, Ge domes could be grown with the help of the C atoms at relatively low temperature, suggesting a possibility to produce small quantum dots with high number density as well as size uniformity.
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