Abstract
In this study, we introduced a closed-form empirical expression for estimating the channel temperature in AlGaN/GaN HEMTs. This model incorporates parameters such as substrate thickness, gate length, gate width, and temperature-dependent thermal conductivity. The model's validity was rigorously established through comprehensive comparisons involving the channel temperature measurement procedure (DC) and TCAD device simulations. The outcomes exhibited a noteworthy alignment with the observed model data, reinforcing its credibility. The model yields a notably improved accuracy in channel temperature estimation compared to assumptions based on constant thermal conductivity. This observation holds particular significance for GaN/Sapphire HEMTs. The utilization of the closed-form expression enables the simultaneous optimization of both electrical and thermal properties, utilizing conventional computer-aided design tools.
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