Abstract
Precipitates rich in erbium were found in a (Ga,In)P crystal doped with 1 at% Er, grown by the synthesis-solute technique. Typical precipitates were characterized using an electron probe microanalyser and X-ray emission spectroscopy. The composition of some precipitates was found to be close to the ErP phase. Other precipitates were identified as indium. The increase in the binding energy of the 4f electrons of Er in ErP by 0.75 eV in comparison to metallic Er, was ascertained.
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