Abstract
We study the precessional switching of the magnetization in a microscopic magnetic tunnel junction cell as used in magnetic random access memories. By measuring the tunneling magnetoresistance versus time we follow the dynamical response of the cell’s free layer magnetization to ultrashort field pulses applied along the in-plane magnetic hard axis. In the presence of a strong easy axis bias field a pronounced precession of the magnetization with damping times of the order of 2 ns is observed. At lower bias fields the large angle precession induced by pulses as short as 170 ps can switch large domains of the free layer magnetization. Multiple application of identical pulses reversibly toggles the magnetization between the two easy directions. For longer pulses coherent higher order switching is observed in full agreement with theory.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
