Abstract
Prebreakdown and breakdown effects under high electric fields in AlGaN/GaN heterojunction field effect transistors were studied. In the subthreshold regime, at large drain-to-source voltages (>80 V), along with the gate leakage current, a significant source current was measured. For a wide range of gate-to-source bias voltages in OFF and ON regimes, the breakdown voltage was limited by a rapid buildup of the source current, rather than a process dominated by gate leakage.
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