Year-end Sale % OFF 
Abstract
We propose a deep floating guard ring (DFGR) structure which effectively prevents the curvature breakdown of a central junction in a planar InGaAs∕InP avalanche photodiode (APD). In order to investigate the DFGR APD performance, the dark current, photocurrent, and radial dependence of gain were measured and analyzed. In addition, the relation between breakdown voltage and multiplication layer thickness was calculated using a nonlocal history-dependent model. Reliable operation in the device center region was examined by measuring the radial gain. As a result, it has been confirmed that the DFGR is very useful for an APD with a very thin multiplication layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
