Abstract
Pr 2O 3-added GaAs liquid phase epitaxy (LPE) has been studied. Due to the gettering effect of the rare earth (RE) elements low oxide surfaces and high purity GaAs epilayers are obtained and examined. After epitaxial growth, the samples are prepared by a standard Schottky diode (SD) fabrication process. The variations in the electrical properties of these SDs are reported. For an embodiment with a Schottky barrier height (SBH) above 0.94 eV, a leakage current of around 0.7×10 −6 A and a breakdown voltage of 140 V is obtained at a Pr 2O 3 addition ratio of 0.05 mg per gram of gallium. These SDs were also irradiated by gamma rays for study of radiation hardness. After 4 h irradiation, all samples are initially out of function. However, 4 h later, due to natural annealing, the Pr 2O 3-added samples can recover up to 72% of their original SBH values. Furthermore, after a further 24 h, the tendency to recover is saturated and a 17% SBH retardation still remains. During this period, the appropriate Pr 2O 3-added SDs (#508 & #509) show better radiation hardness than the one (#501) with no addition.
Published Version
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