Abstract
Scanning microwave impedance microscopy (sMIM) is an emerging electrical mode for scanning probe microscopy (SPM). We apply the technique to the profiling of dopants in semiconductor samples with sub-micron spatial resolution. This work demonstrates the practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. A planar dopant calibration sample is used to calibrate the sMIM prior to performing the measurements on an “unknown” production device. We utilize nanoscale C-V curves to establish a calibration curve for both n- and p-type carriers in a single reference and apply the calibration curve to an “unknown” device presenting the measurements in units of doping concentration.
Published Version
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