Abstract
The authors report new calculations of mean escape depths (MEDs), information depths (IDs), and effective attenuation lengths (EALs) for 16 photoelectron lines and 9 Auger-electron lines of five elemental solids (Si, Cu, Ag, W, and Au) and four inorganic compounds (ZrO2, ZrSiO4, HfO2, and HfSiO4). These calculations were made to update similar previous calculations with improved data for the transport mean free path (TMFP) that are now available. Ratios of averages of the new MEDs, IDs, and EALs to the inelastic mean free path for electron emission angles between 0° and 50° varied linearly with the single-scattering albedo, a simple function of the inelastic mean free path and TMFP. The slopes of the linear relations depend only weakly on the atomic potential used in calculations of differential elastic-scattering cross sections (from which TMFPs are derived). The new linear relations are simple practical expressions for determining the MED, ID, and EAL for any solid in conventional Auger electron spectroscopy and x-ray photoelectron spectroscopy.
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