Abstract
Conventional plasma strip processes are prone to cause damage to advanced porous low-k materials. Therefore, all-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom Anti Reflective Coating (BARC) in Back-End-of-Line (BEOL) semiconductor manufacturing. A two step process with a UV pre-treatment and an ozonated strip process is considered. The UV pre-treatment under O2 at high temperature enhances PR and BARC removal. With a subsequent fully aqueous ozone wet strip, complete removal is feasible.
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