Pr 2 O 3 on Si(001): A commensurate interfacial layer overgrown by silicate

Abstract

The growth of Pr2O3 on Si(001) for film thicknesses up to 3nm was studied in situ in ultrahigh vacuum without exposure to ambient by x-ray reflectivity, grazing incident x-ray diffraction, and angle-resolved x-ray photoelectron spectroscopy using synchrotron radiation. The electron density and chemical composition profiles as well as the in-plane superstructure deduced from the present analysis reveal the development of a 0.5nm thick transition layer at the interface that exhibits a cubic Pr2O3 structure and is commensurate to the Si substrate. This layer is overgrown by disordered Pr silicate.