Power switching transistors based on gallium nitride epitaxial heterostructures

Abstract

The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage V th = +1.2 V and a maximum drain-source current I ds = 0.15 A/mm at the drain-source voltage V ds = +8 V. The drain-source breakdown voltage in the closed state is V b = 300 V at the drain-source distance L ds = 8.5 μm and drain-source voltage V ds = 0 V.