Abstract

The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large avalanche current capability. Near term improvements now under development suggest that power MOSFET's will have a dominant position in the 500 Volt and under power control market.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call