Abstract
This paper presents the results of an R&D program conducted jointly by a small business and a university which was funded by the US Army. The goal of the program was to design a manufacturable pair of high power MOSFETs which meet stringent military requirements. Three candidate technologies with the potential to be used as a basis for the high power MOSFET technology were identified and investigated. The DMOSFET technology was selected as the most promising technology due to its high degree of manufacturability and reliability. The AET proprietary tool, STADIUM-TCAD, was used to determine the potential manufacturability of the DMOSFET devices. In addition, we have shown that the DMOSFET devices designed in this work have excellent potential as a technology for high power switching applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
