Abstract
FET’s have become increasingly popular as possible replacements for microwave electron tubes and solid-state active diodes. Reliability is extremely important for these devices when used in communication systems, especially for space applications. The reliability of small, signal GaAs FET’s has been extensively investigated. As a result, the reliability of small-signal or low-noise devices is fairly well understood, and the essential problems are practically solved. However, the reliability of power devices is much more complicated because they are expected to operate in the vicinity of their maximum capability of voltage, current, or power dissipation, in the presence of large RF signals.
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