Abstract
Power switching devices made from wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) have the potential to make transformative impact on electricity infrastructure. However, limited availability, high cost, unproven application-level field-reliability, inaccurate and incomplete datasheets from the manufacturers, and most importantly - lack of trust and true collaboration among the WBG supply chain industries - are severely hindering the large-scale commercialization of WBG power conversion technology. Although SiC power diodes and power MOSFETs are commercially available for voltage ratings up to 1,700 volts from a couple of manufacturers, a careful review of the published literature and commercial product datasheets suggests that performance and reliability of these devices may be severely compromised compared to silicon power devices. For example, limited reported data available for dv/dt, avalanche, and safe-operating area (SOA) parameters of SiC power diodes and MOSFETs are inferior to silicon power devices with identical ratings. This paper presents a simple physics-based analysis of power-handling capability of WBG power devices, and explains the possible causes of limited performance and reliability of SiC power devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
