Power effect of ZnO:Al film as back reflector on the performance of thin-film solar cells

Abstract

Aluminum-doped zinc oxide (AZO) is attracting interest as a potential transparent conducting oxide material for use in amorphous silicon (a-Si) thin-film solar cells. The absorption loss in the n-a-Si:H/Ag interface of the p-i-n thin film solar is high because the extinction coefficient of the Ag that is used as a back reflector is high. In this work, transparent conducting AZO films with a power in the range 500 W to 900 W prepared under Ar-ambient at a substrate temperature of 25 °C by RF-magnetron in-line sputtering. To minimize the absorption loss at longer wavelengths, an AZO layer we inserted at the n-a-Si:H/Ag interface of a solar cell with a glass/SnO2:F/p-a-SiC:H/buffer-layer/i-a-Si:H/n-a-Si:H/Ag structure and the performance of the cell with AZO/Ag deposited instead of Ag on the back contact, was investigated. The effects of the RF-magnetron sputtering deposition parameters on the optical, electrical and structural properties of the AZO films were analyzed. Optimized AZO films with high transmittance (> 80%) and low resistivity (1.47 × 10−3 Ω-cm) in the wavelength range 400–800 nm were obtained under the sputtering conditions. The p-i-n a-Si solar cell with the AZO/Ag back contact had a conversion efficiency of 9.42%, which was higher than that (7.36%) of the cell without the AZO/Ag back contact. Light-soaking of these cells for 1000 h at 60 °C led to stabilization at 8.32% for the best cell. The relative typical efficiency degradation of about 10% for single-junction cells demonstrates that this treatment does not negatively influence stability.