Abstract
Reverse recovery processes in diodes, leading to a high voltage rise rate, have been considered. A maximum voltage rise rate for silicon diodes as high as 2·10 12 v/s has been estimated. Power drift step recovery diodes for shaping 1 kV voltage steps with nanosecond fronts have been designed and investigated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
