Power dissipation in the mixed metal-insulator state of self-heated VO2 single crystals and the effect of sliding domains

Abstract

The mixed metal-insulator state in VO2 sets on within the current-controlled negative differential resistivity regime of I-V loops traced at ambient temperature. In this state, the stability of I(V) and/or spontaneous switching between initial and final steady states are governed by the load resistance RL in series with the sample. With increasing current (decreasing voltage), the power P = IV reaches a maximum (Pmax) and drops to a minimum (Pmin) along a path that depends on RL. For low enough RL, the ratio Pmax/Pmin may exceed by far the contrast in thermal emissivity from films of VO2 over the metal-insulator transition as reported in Kats et al. [Phys. Rev. X 3, 041004 (2013)]. The minimum is followed by a range of currents where the power increases with current. The return path overlaps the original path and continues towards backward switching. For a few samples, there is evidence from optical microscopy that the portion of the P(I) loop between Pmin and backward switching coincides with the range of currents where semiconducting domains slide within a metallic background. Damage induced in crystals by repeated I-V cycling suppresses domain sliding and flattens P(I) in the respective range of currents. This is consistent with the current dependent excess power dissipation being induced by the sliding domains.