Abstract
Abstract Epitaxial VO 2 film was produced through post-reduction of vanadium oxide film grown on rutile TiO 2 (1 1 0) by atomic layer deposition (ALD) method. The ALD grown film was transformed to VO 2 after annealing at 350 °C under 2% hydrogen gas flow. Metal–insulator phase transition of the transformed VO 2 (1 1 0) film has been characterized with resonance photoemission and soft X-ray absorption spectroscopy. Formation of high quality film is evident from clear metal–insulator transition features in oxygen K-edge absorption spectra and metallic peaks in the Fermi level in V 2p-3d resonance photoemission map taken at 127 °C. The VO 2 film formation through the post-reduction of ALD grown vanadium oxide at considerably low temperature could provide route to incorporate VO 2 conformal layer into an integrated device utilizing the metal–insulator transition.
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