Power conversion efficiency optimization of LaFeO3 Mott insulator based solar cell with metal oxide transport layers using SCAPS

Abstract

Mott insulator-based heterostructures have been proposed as good candidates for highly efficient solar cells. Mott insulating transition metal oxide (LaFeO3) containing earth-abundant elements have long-term stability and the strong electron–electron correlation found in them enhances the quantum efficiency of the device. This paper represents a simulation work to access the energy conversion ability of Mott insulator-based solar cell with LaFeO3 as its absorbing layer using a solar cell capacitance simulator (SCAPS). This work explores the influence of the electron transport layer (ETL), hole transport layer (HTL), active perovskite layer thickness, and defect density on device performance. The simulation showed that In2O3 and MoO3 are the most competent materials for ETL and HTL layers. Additionally, the impact of other optoelectronic parameters of different layers is also investigated and discussed. An efficiency of 9.11 % (with Voc = 1.997 V, Jsc = 6.75 mA/cm2, and fill factor of 67.55 %) has been achieved with Nb:STO/In2O3/LaFeO3/MoO3/Au solar cell architecture. The simulated model has great potential for making stable solar cell devices by using Mott insulator perovskite materials.