Abstract
A report is presented on a Al/HfN/p-Si(100) n-MISFET with excellent electrical properties that inserts a 4 nm-thick HfN gate dielectric with equivalent oxide thickness of 0.7 nm formed by electron-cyclotron-resonance plasma sputtering. The threshold voltage (Vth) of the device was 0.05 V. The on/off ratio and subthreshold swing at W/L = 90 µm/5 µm were ∼103 and 200 mV/dec., respectively. In particular, the n-MISFET exhibits IDS,sat = 20.2 µA/μm and gm = 20.5 mS/mm. This is the first report of n-MISFET characteristics with HfN gate dielectric.
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