Abstract
Shallow donor far infrared spectroscopy was carried out on n-type CdTe thin layers grownby molecular beam epitaxy on semi-insulating GaAs substrates. Indium doped layers of0.5 µm thickness were deposited on a nominally undoped CdTe buffer layer with the thickness between 0.5and 7 µm. We show that (i) the layers investigated are unintentionally doped with a nativedonor of an unknown origin with the chemical shift different from that of In;(ii) the shape of the spectral lines shows that the CdTe part of a structure iscomposed of layers characterized by either a small or a large disorder; (iii)the main sources of the disorder are structural defects originating from theCdTe/GaAs interface and propagating into CdTe layers over a distance of about4 µm.
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