Potential benefits of graded channel dopingless transistor with source side dual-k spacer to upgrade analog/RF performance

Abstract

In this paper, we aim to enhance the analog/RF performance of doping-less transistor using channel and spacer engineering. For this we use graded channel and dual-k spacer at the source side in double gate doping-less transistor (Dual-ks GC DL-DGFET). The analog parameters such as trans-conductance (Gm), output conductance (GD), trans-conductance to drive current ratio (Gm/IDS), early voltage (Vea), intrinsic gain (Av), total gate capacitance (CGG), unity gain frequency (fT) are compared for both conventional double gate conventional doping-less transistor and dual-k spacer at source side in double gate doping-less transistor. From the simulation results it is seen that there is improvement in Gm by ∼25.91%, Gd by ∼19.35%, Av0 by ∼66.55%, Cgg by ∼32.23%, fT by ∼9.54% in Dual-ks GC DL-DGFET as compared with conventional DL-DGFET. From above result we get a tremendous increment of Gm, A v0 , and slight increment in cut-off frequency fT, in Dual-ks GC DL-DGFET as compared with conventional DL-DGFET.