Potential barrier and photovoltage at interfaces of hexadecafluoro-copper-phthalocyanine and copper phthalocyanine films on the surface of tin dioxide

Abstract

Potential barrier formation during the deposition of ultrathin coatings of copper phthalocyanine (CuPc) and hexadecafluoro-copper-phthalocyanine (F16CuPc) on the surface of polycrystalline tin dioxide and during the deposition of F16CuPc coatings over a CuPc film is studied. A photoinduced change in the surface potential of the prepared structures upon exposure to light in the visible wavelength region is detected. The surface photovoltage of the studied organic films has a positive sign with respect to the substrate, its spectral dependences correspond to the absorption spectra of the organic materials CuPc and F16CuPc. Surface potential measurements are performed using a probe beam of low-energy electrons, based on the total current spectroscopy technique. A total decrease in the work function by 0.2 eV is detected during the deposition of a CuPc film up to 8 nm in thickness on a SnO2 substrate; in the case of the F16CuPc/SnO2 interface, an increase in the work function by 0.55 eV is detected. At the initial deposition stage, at organic film thicknesses of up to 1.5 nm, the interfacial potential barrier corresponded to electron density transfer from the organic film to the substrate in both cases of CuPc/SnO2 and F16CuPc/SnO2. It is assumed that the photoinduced change in the surface potential is caused by charge-carrier separation in a boundary region up to 1.5 nm thick.