Abstract
In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm −1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency f T and maximum frequency of oscillation f max are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of f T and 30 GHz of f max.
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