Potential and Activities of III-V/Si Tandem Solar Cells

Abstract

The paper presents efficiency potential of III-V/Si tandem solar cells with efficiencies of more than 35% under 1-sun AM1.5G and effects of dislocation upon solar cell properties of III-V-on-Si single-junction solar cells and III-V/Si tandem solar cells. Because III-V/Si system has large lattice mismatching and difference in thermal expansion coefficient, generation of misfit and thermal stress induced dislocations affect on solar cell properties. Effects of dislocations upon minority-carrier lifetime are derived from considering one dimensional transport of minority carriers to dislocations. In order to realize high efficiency solar cells with similar efficiency by homo-epitaxially grown solar cells, low density dislocation of less than 3 × 105 cm−2 is necessary. This paper also reviews approaches on reduction in dislocation density in III-V compound films on Si and improvements in efficiencies of III-V compound single-junction solar cells on Si substrates and III-V/Si tandem solar cells, along with reviewing the efficiency potentials of using other efficiency potential of other materials/Si tandem solar cells such as II-V compound/Si. Chalcopyrite/Si and Perovskite/Si tandem solar cells.