Abstract
The paper presents efficiency potential of III-V/Si tandem solar cells with efficiencies of more than 35% under 1-sun AM1.5G and effects of dislocation upon solar cell properties of III-V-on-Si single-junction solar cells and III-V/Si tandem solar cells. Because III-V/Si system has large lattice mismatching and difference in thermal expansion coefficient, generation of misfit and thermal stress induced dislocations affect on solar cell properties. Effects of dislocations upon minority-carrier lifetime are derived from considering one dimensional transport of minority carriers to dislocations. In order to realize high efficiency solar cells with similar efficiency by homo-epitaxially grown solar cells, low density dislocation of less than 3x105 cm-2 is necessary. This paper also reviews approaches on reduction in dislocation density in III-V compound films on Si and improvements in efficiencies of III-V compound single-junction solar cells on Si substrates and III-V/Si tandem solar cells.
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