Abstract
For phase-change memory beyond the 30 nm design rule, chemical mechanical planarization (CMP) performing at a high polishing rate, reasonable selectivity, and no corrosion-induced pits is essential for planarizing nitrogen-doped polycrystalline (GST) deposited on the confined memory cell structure. We develop a new alkaline slurry added with used as an oxidizer. The alkaline slurry added with 0.3 wt % has a polycrystalline GST film polishing rate of 5200 Å/min, a polishing rate selectivity between polycrystalline GST and film of 100:1, and no corrosion-induced pit. In addition, polycrystalline GST film CMP using the alkaline slurry added with is observed to follow a cyclic reaction polishing mechanism.
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